Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2524
DESCRIPTION
·High Breakdown Voltage ：V
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1700V (Min)
CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
CBO
CES
EBO
I
C
CM
BM
C
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 1700 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 8 A
Collector Current-Peak 20 A
Base Current-Peak 5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ Ta=25℃
100
W
3
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2524
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE
V
ECF
f
T
Resistive Load
Emitter-Base Breakdown Voltage IE= 500mA ; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 6A; IB= 2A B 3.0 V
Base-Emitter Saturation Voltage IC= 6A; IB= 2A B 1.5 V
Collector Cutoff Current
DC Current Gain IC= 6A; VCE= 5V 4 10
C-E Diode Forward Voltage IF= 8A 2.0 V
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
VCB= 1000V; IE= 0 50 μA
= 1700V; IE= 0
V
CB
1.0 mA
t
s
t
f
Storage Time 12 μs
I
Fall Time
= 6A, I
C
B(
end
= 2A, L
)
leak
= 5μH
0.8 μs
isc Website：www.iscsemi.cn
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