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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2449
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 3000( Min.) @(IC= 8A, VCE= 5V)
·Low Collector Saturation Voltage: V
·Complement to Type 2SB1594
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 160V(Min)
(BR)CEO
= 3.0V(Max)@ (IC= 8A, IB= 8mA)
CE(sat)
B
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 10 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
150 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2449
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
I
I
h
h
C
h
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 160 V
(sat)
(on)
CBO
CEO
EBO
FE-1
FE-2
f
T
OB
FE-1
Collector-Emitter Saturation Voltage IC= 8A; IB= 8mA B 3.0 V
Base-Emitter On Voltage IC= 8A; VCE= 5V 3.0 V
Collector Cutoff Current VCB= 160V; IE= 0 100 μA
Collector Cutoff Current VCE= 160V; IB= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 8A; VCE= 5V 3000 20000
DC Current Gain IC= 12A; VCE= 5V 2000
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 30 MHz
Output Capacitance
Classifications
I
= 0; VCB= 10V; f
E
= 1MHz
test
150 pF
A B C
3000-10000 5000-15000 7000-20000
isc Website：www.iscsemi.cn
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