Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2406
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Collector Power Dissipation: PC= 25W@ TC= 25℃
·Good Linearity of h
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= 80V(Min)
FE
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Base Current-Continuous 0.4 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2406
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
(on)
OB
f
T
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Base-Emitter On Voltage IC= 3A; VCE= 5V 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 30 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 0.5A; VCE= 5V 70 240
DC Current Gain IC= 3A; VCE= 5V 15
Output Capacitance
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 8 MHz
I
= 0; VCB= 10V; f
E
= 1MHz
test
90 pF
h
Classifications
FE-1
O Y
70-140 120-240
isc Website：www.iscsemi.cn
2
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