Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2400
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1569
·High transition frequency
·Collector power dissipation:
=20W(TC=25℃)
P
C
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-peak 3 A
PC Collector dissipation
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 2.0
=25℃ 20
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2400
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.1A ; VCE=5V 60 320
fT Transition frequency IC=0.1A ; VCE=5V;f=30MHz 80 MHz
COB Collector output capacitance IE=0; VCB=10V; f=1MHz 20 pF
Collector-emitter breakdown voltage IC=1mA ;IB=0 120 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=1A ;IB=0.1A 2.0 V
Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V
Collector cut-off current VCB=120V; IE=0 1.0
Emitter cut-off current VEB=4V; IC=0 1.0
=50μA ;IE=0
C
I
=50μA ;IC=0
E
120 V
5 V
μA
μA
hFE Classifications
D E F
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2400
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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