Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2399
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1568
·High DC current gain.
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
ICM Collector current-peak Single pulse 6 A
PC Collector dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
TC=25℃
Ta=25℃
30
W
2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2399
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=50μA; IE=0 80 V
Collector-emitter breakdown voltage IC=1mA; IB=0 80 V
Collector-emitter saturation voltage IC=2A ; IB=4mA 1.5 V
Collector cut-off current VCB=80V;IE=0 0.1 mA
Emitter cut-off current VEB=5V;IC=0 3.0 mA
hFE DC current gain IC=2A ; VCE=3V 1000 10000
COB Output capacitance IE=0 ; VCB=10V; f=1MHz 35 pF
fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2399
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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