Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2394
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Wide SOA (safe operating area)
·Complement to type 2SB1565
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 6 A
PC Collector dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
Ta=25℃
=25℃
T
C
2
W
25
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2394
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.5A ; VCE=5V 100 320
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=5V;f=5MHz 8 MHz
Collector-emitter breakdown voltage IC=1mA ;IB=0 60 V
I
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V
Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V
Collector cut-off current VCB=60V; IE=0 10
Emitter cut-off current VEB=7V; IC=0 10
=50μA ;IE=0
C
I
=50μA ;IC=0
E
80 V
7 V
μA
μA
hFE Classifications
E F
100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2394
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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