Page 1
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SD2386
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1557
·High breakdown voltage:V
APPLICATIONS
·Power amplifier applications
PINNING
PIN DESCRIPTION
=140V(Min)
CEO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
IB Base current 0.1 A
PC Collector power dissipation TC=25℃ 70 W
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SD2386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V
Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V
VBE Base-emitter voltage IC=6A ; VCE=5V 3.0 V
I
Collector cut-off current VCB=140V IE=0 5.0 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 5.0 μA
EBO
h
DC current gain IC=6A ; VCE=5V 5000 30000
FE-1
h
DC current gain IC=10A ; VCE=5V 2000
FE-2
Cob Collector output capacitance IE=0 ; VCB=10V;f=1MHz 90 pF
fT Transition frequency IC=1A ; VCE=5V 30 MHz
h
Classifications
FE-1
A B C
5000-12000 9000-18000 15000-30000
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors 2SD2386
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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