Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.com
isc Silicon NPN Darlington Power Transistor 2SD2385
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High DC Current Gain : h
= 5000(Min)@IC= 7A
FE
·Complement to Type 2SB1556
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
= 140V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 140 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 8 A
B Base Current-Continuous 0.1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
100 W
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.com
isc Silicon NPN Darlington Power Transistor 2SD2385
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
(sat)
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 140 V
Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA B 2.5 V
Base-Emitter On Voltage IC= 7A ; VCE= 5V 3.0 V
Collector Cutoff Current VCB= 140V ; IE=0 5
Emitter Cutoff Current VEB= 5V; IC=0 5
DC Current Gain IC= 7A ; VCE= 5V 5000 30000
DC Current Gain IC= 12A ; VCE= 5V 2000
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz
=0 ; VCB= 10V;f
I
E
= 1.0MHz
test
110 pF
μA
μA
h
Classifications
FE-1
A B C
5000-12000 9000-18000 15000-30000
isc Website：www.iscsemi.cn
2
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