Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2374 2SD2374A
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1548/1548A
·Low collector saturation voltage
·High forward current transfer ratio h
which has satisfactory linearity
APPLICATIONS
·For power amplifications
PINNING
PIN DESCRIPTION
FE
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
PC Collector dissipation
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 6 V
℃)
2SD2374 60
Open emitter
2SD2374A
2SD2374 60
Open base
2SD2374A
Ta=25℃
TC=25℃
80
80
2
25
V
V
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2374 2SD2374A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
CEO
CEsat
Collector-emitter
voltage
Collector-emitter saturation voltage IC=3A ;IB=0.375A 1.2 V
2SD2374 60
I
2SD2374A
=30mA ; IB=0
C
80
V
VBE Base-emitter voltage IC=3A ; VCE=4V 1.8 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=6V; IC=0 1 mA
DC current gain IC=1A ; VCE=4V 70 250
DC current gain IC=3A ; VCE=4V 10
h
h
I
I
I
CBO
CEO
EBO
FE-1
FE-2
2SD2374 VCB=60V; IE=0
2SD2374A VCB=80V; IE=0
2SD2374 VCE=30V; IB=0
2SD2374A V
=60V; IB=0
CE
200
300
μA
μA
fT Transition frequency IC=0.5A ; VCE=10V 30 MHz
Switching times
ton Turn-on time 0.5 μs
=1.0A; IB1=-IB2=0.1A
I
ts Storage time 2.5 μs
tf Fall time
V
C
CC
=50V
0.4 μs
h
Classifications
FE-1
Q P
70-150 120-250
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2374 2SD2374A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2374 2SD2374A
4
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