Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2348
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for color TV
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current ±8 A
ICM Collector current-peak ±16 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation TC=25℃ 50 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2348
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Emitter-base breakdown voltage IE=300mA , IC=0 5 V
Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V
Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1 mA
Emitter cut-off current VEB=5V; IC=0 83 250 mA
DC current gain IC=1A ; VCE=5V 10
DC current gain IC=6A ; VCE=5V 6 9
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 170 pF
VF
Diode forward voltage I
=6A 1.8 V
F
ts Storage time 12
I
=6A ;IB1=1.2A;fH=15.75kHz
CP
tf
Fall time
0.7
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2348
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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