Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2340
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector power dissipation
Collector-base voltage Open emitter 130 V
Collector-emitter voltage Open base 110 V
Emitter-base voltage Open collector 5 V
℃)
TC=25℃ 50
W
Ta=25℃ 2.5
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2340
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
Collector-emitter breakdown voltage IC=30mA ;IB=0 110 V
Collector-emitter saturation voltage IC=5A ;IB=5mA 2.5 V
Base-emitter saturation voltage IC=5A ;IB=5mA 3.0 V
Collector cut-off current VCB=130V; IE=0 100
Collector cut-off current VCE=110V IB=0 100
Emitter cut-off current VEB=5V; IC=0 100
μA
μA
μA
hFE DC current gai n IC=3A ; VCE=5V 5000
fT Transition frequency IC=0.5A ; VCE=10V 20 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2340
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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