Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2333
DESCRIPTION ·
·With TO-3PML package
·High breakdown voltage
·Built-in damper diode
APPLICATIONS
·Color TV horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IBM Base current-peak 2.5 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
1
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2333
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
VF
Collector-emitter sustaining voltage IC=100mA; IB=0 800 V
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
DC current gain IC=1A ; VCE=5V 8
Diode forward voltage I
=5A 2.0 V
F
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2333
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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