Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2331
DESCRIPTION
·With TO-3PFa package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
IB Base current 1 A
PC Collector power dissipation TC=25℃ 40 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage 5 V
℃)
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2331
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=3A; IB=0.8A 3.0 5.0 V
Base-emitter saturation voltage IC=3A ;IB=0.8A 1.5 V
Collector cut-off current VCB=800V IE=0 10 μA
DC current gain IC=0.5A ; VCE=5V 8
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
VF
Diode forward voltage I
=3.5A 2.0 V
F
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2331
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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