Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2300
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal output deflection
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 1500 V
CBO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 5 A
ICM Collector current-peak 6 A
I
C(
surge
PC Collector power dissipation TC=25℃ 50 W
Collector surge current 16 A
)
=25℃)
a
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2300
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Emitter-base breakdown voltage IE=350mA , IC=0 6 V
(BR)EBO
V
Collector-emitter saturation voltage IC=4.5A ; IB=1.2A 5.0 V
CE(sat)
V
Base-emitter saturation voltage IC=4.5A ; IB=1.2A 1.5 V
BE(sat)
I
Collector cut-off current VCE=1500V; RBE=0 500
CES
h
DC current gain IC=1A ; VCE=5V 20
FE
I
tf Fall time
VF
Diode forward voltage I
=4A ; IB1=0.8A; IB2≈-1.5A
C
=6A 3.0 V
F
1.0
μA
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2300
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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