Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2296
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current -peak 6 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2296
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
hFE DC current gai n IC=1A ; VCE=5V 8 30
Switching times
tf Fall time IC=4.0A;IB1=0.8A;IB2=-1.5A 0.8 μs
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 800 V
Emitter-base breakdown voltage IE=10mA ;IC=0 6 V
Collector-emitter saturation voltage IC=4.5A; IB=1.2A 5.0 V
Base-emitter saturation voltage IC=4.5A; IB=1.2A 1.5 V
Collector cut-off current VCE=1500V ;RBE=0 0.5 mA
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Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon Power Transistors 2SD2296
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
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