Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2293
DESCRIPTION
·With TO-3PN package
·High voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
PC Collector power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55-150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
EBO(BR)
V
CEsat
V
BEsat
hFE DC current gain IC=0.5A ; VCE=5V 8
I
CES
Collector-emitter sustaining voltage IC=100mA; IB=0 700 V
Emitter-base breakdown voltage IE=350mA; IC=0 6 V
Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V
Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V
Collector cut-off current VCE=1500V; VBE=0 0.5 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2293
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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