Page 1
Po wer Transistors
2SD2276
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1503
Features
■
●
Optimum for 110W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
160
140
5
15
8
120
3.5
150
–55 to +150
CE(sat)
: <2.5V
Unit
W
˚C
˚C
Unit: mm
20.0±0.5
6.010.0
26.0±0.520.0±0.5
1.5
1.5
2.5
Solder Dip
V
V
10.9±0.5
V
A
123
A
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
B
C
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q S P
h
5000 to 15000 7000 to 21000 8000 to 30000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
min
140
2000
5000
typ
20
2.0
6.0
1.2
max
100
100
100
30000
2.5
3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD2276
PC—Ta IC—V
200
)
W
(
C
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.5W)
(P
(1)
(2)
C
(3)
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
25˚C
–25˚C
Collector current IC (A
)
)
CE
12
10
)
A
(
8
C
6
4
Collector current I
2
0
012108264
IB=2mA
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
TC=25˚C
0.3mA
0.2mA
Collector to emitter voltage VCE (V
hFE—I
C
100000
30000
FE
10000
TC=100˚C
3000
1000
25˚C
300
100
–25˚C
Forward current transfer ratio h
30
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
VCE=5V
)
V
BE(sat)—IC
100
)
V
(
30
BE(sat)
10
3
1
0.3
Base to emitter saturation voltage V
0.1
)
TC=–25˚C
100˚C
25˚C
0.1 1 10 1000.3 3 30
Collector current IC (A
Cob—V
1000
)
pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
1 3 10 30 100
Collector to base voltage VCB (V
CB
IC/IB=1000
)
IE=0
f=1MHz
T
=25˚C
C
)
100
30
)
µs
(
10
t
f
stg
,t
stg
3
,t
t
on
on
1
t
f
0.3
0.1
Switching time t
0.03
0.01
0164128
Collector current IC (A
2
ton, t
, tf — I
stg
Pulsed tw=1ms
Duty cycle=1%
=1000 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
C
)
Area of safe operation (ASO)
100
30
I
CP
)
I
C
10
A
(
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
)
Page 3
Po wer Transistors 2SD2276
R
—t
th(t)
1000
)
˚C/W
(
100
(t)
th
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
(2) P
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
T
(1)
10
1
Thermal resistance R
0.1
–3
10
–2
10
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10
3
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