Page 1
Po wer Transistors
2SD2273
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1500
Features
■
●
Optimum for 40W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
100
80
5
6
3
45
3.5
150
–55 to +150
CE(sat)
: <2.5V
Unit
W
˚C
˚C
Unit: mm
20.0±0.5
6.010.0
26.0±0.520.0±0.5
1.5
1.5
2.5
Solder Dip
V
V
10.9±0.5
V
A
123
A
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
B
C
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
5000 to 15000 8000 to 30000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 100V, IE = 0
VCE = 80V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 2A, IB = 2mA
IC = 2A, IB = 2mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 2mA, IB2 = –2mA,
VCC = 50V
min
80
2000
5000
typ
20
3.5
2.5
0.6
max
100
100
100
30000
2.5
3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD2273
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
)
100
V
(
30
CE(sat)
10
3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.5W)
(P
C
(1)
(2)
(3)
Ambient temperature Ta (˚C
V
CE(sat)—IC
TC=100˚C
25˚C
–25˚C
IC/IB=1000
CE
6
5
)
A
(
4
C
3
2
IB=3mA
T
C
0.5mA
0.4mA
0.3mA
=25˚C
0.2mA
100
)
V
(
BE(sat)
30
10
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
100000
FE
10000
TC=100˚C
1000
0.1mA
C
VCE=5V
0.3
Base to emitter saturation voltage V
0.1
)
1000
)
pF
(
300
ob
100
30
V
BE(sat)—IC
IC/IB=1000
3
TC=–25˚C
1
0.1 1 10 1000.3 3 30
100˚C
25˚C
Collector current IC (A
Cob—V
CB
)
IE=0
f=1MHz
T
=25˚C
C
1
0.3
0.1
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (A
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
ton, t
, tf — I
stg
Pulsed tw=1ms
Duty cycle=1%
=1000 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
t
on
t
stg
t
f
)
C
Switching time t
0.03
0.01
08264
Collector current IC (A
)
25˚C
100
–25˚C
Forward current transfer ratio h
10
0.01 0.1 1 10
Collector current IC (A
Area of safe operation (ASO)
100
30
)
10
A
I
(
CP
C
I
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
Non repetitive pulse
T
10ms
DC
=25˚C
C
t=1ms
10
3
Collector output capacitance C
1
1 3 10 30 100
)
Collector to base voltage VCB (V
)
)
2
Page 3
Po wer Transistors 2SD2273
R
—t
th(t)
1000
)
˚C/W
(
100
(t)
th
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
(2) P
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
T
(1)
10
1
Thermal resistance R
0.1
–3
10
–2
10
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10
3
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