Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2257
DESCRIPTION
·With TO-220F package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1495
·DARLINGTON
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current
ICM Collector current-peak
IB Base current 0.3 A
PC Collector dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 8 V
℃)
Ta=25℃
T
=25℃
C
±3
±5
2.0
20
A
A
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2257
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
V
ECF
Switching times
ton Turn-on time 0.5 μs
ts Storage time 2.0 μs
Collector-emitter breakdown voltage IC=10mA ;IB=0 100 V
Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 1.5 V
Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V
Collector cut-off current VCB=100V ;IE=0 10 μA
Emitter cut-off current VEB=8V; IC=0 0.8 4.0 mA
DC current gain IC=1A ; VCE=2V 2000
DC current gain IC=2A ; VCE=2V 2000
Diode forward voltage IE=1A 2.0 V
I
=-IB2=1.5mA
B1
=30V ,RL=20Ω
V
CC
Duty cycle≤1%
tf Fall time
2
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2257
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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