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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD2256
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 25 A
ICM Collector Current-Peak 35 A
PC
Tj Junction Temperature 150 ℃
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 7 V
Collector Power Dissipation
@TC=25℃
Storage Temperature Range -55~150 ℃
120 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD2256
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
= 200mA, RBE= ∞
C
120 V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
CEO
Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V
I
Collector-Emitter Breakdown Voltage
= 25mA, RBE= ∞
C
120 V
Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V
Collector-Emitter Saturation Voltage I
Collector-Emitter Saturation Voltage I
Base-Emitter Saturation Voltage I
Base-Emitter Saturation Voltage I
= 12A ,IB= 24mA 2.0 V
C
= 25A ,IB= 250mA 3.5 V
C
= 12A ,IB= 24mA 3.0 V
C
= 25A ,IB= 250mA 4.5 V
C
Collector Cutoff current VCB= 100V, IE= 0 10
V
Collector Cutoff current
= 100V, RBE= ∞
CE
10
μA
μA
h
DC Curre nt Gain IC= 12A ; VCE= 4V 2000 20000
FE-1
h
DC Curre nt Gain IC= 25A ; VCE= 4V 500
FE-2
isc Website：www.iscsemi.cn
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