Page 1
Po wer Transistors
2SD2254
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1492
Features
■
●
Optimum for 60W HiFi output
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
130
110
5
10
6
70
3.5
150
–55 to +150
CE(sat)
: <2.5V
Unit
W
˚C
˚C
Unit: mm
20.0±0.5
6.010.0
26.0±0.520.0±0.5
1.5
1.5
2.5
Solder Dip
V
V
10.9±0.5
V
A
123
A
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
B
C
E
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
5000 to 15000 8000 to 30000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 130V, IE = 0
VCE = 110V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 5A
IC = 5A, IB = 5mA
IC = 5A, IB = 5mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 5A, IB1 = 5mA, IB2 = –5mA,
VCC = 50V
min
110
2000
5000
typ
20
1.4
4.5
0.8
max
100
100
100
30000
2.5
3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD2254
PC—Ta IC—V
80
)
(1)
70
W
(
C
60
50
40
30
20
(2)
10
Collector power dissipation P
(3)
0
0 16040 1280 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
–25˚C
1
0.3
0.1
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(P
=3.5W)
C
V
CE(sat)—IC
IC/IB=1000
TC=100˚C
25˚C
Collector current IC (A
)
)
CE
12
10
)
A
(
8
C
6
4
IB=5mA
1mA
0.9mA
0.8mA
0.7mA
0.6mA
TC=25˚C
0.5mA
Collector current I
2
0
012108264
Collector to emitter voltage VCE (V
hFE—I
C
100000
30000
FE
10000
3000
TC=100˚C
1000
25˚C
300
–25˚C
100
Forward current transfer ratio h
30
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
0.4mA
0.3mA
0.2mA
0.1mA
VCE=5V
)
V
BE(sat)—IC
100
)
V
(
30
BE(sat)
10
3
TC=–25˚C
1
0.3
Base to emitter saturation voltage V
0.1
0.1 1 10 1000.3 3 30
)
25˚C
100˚C
Collector current IC (A
Cob—V
1000
)
pF
(
300
ob
100
30
10
3
Collector output capacitance C
1
1 3 10 30 100
Collector to base voltage VCB (V
CB
IC/IB=1000
)
IE=0
f=1MHz
T
=25˚C
C
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
0164128
Collector current IC (A
2
ton, t
, tf — I
stg
Pulsed tw=1ms
Duty cycle=1%
=1000 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
t
stg
t
on
t
f
C
)
Area of safe operation (ASO)
100
30
I
)
CP
10
A
(
I
C
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
DC
t=1ms
)
Page 3
Po wer Transistors 2SD2254
R
—t
th(t)
1000
)
˚C/W
(
100
(t)
th
Note: Rth was measured at Ta=25˚C and under natural convection.
=10V × 0.3A (3W) and without heat sink
(1) P
T
(2) P
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
T
(1)
10
1
Thermal resistance R
0.1
–3
10
–2
10
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10
3
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