Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2253
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
APPLICATIONS
·Color TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 12 A
IB Base current 3 A
Collector-base voltage Open emitter 1700 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
T
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
=25℃
C
50 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2253
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF
VF
ts Storage time 6.0 μs
tf
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=5A ;IB=1A 5.0 V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 66 200 mA
DC current gain IC=1A ; VCE=5V 8 28
Diode forward voltage I
Fall time
=5A 2.0 V
F
Resistive load
=5A ;IB1=1A;IB2=-2A;RL=40Ω
I
CP
0.4 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2253
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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