Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2241
DESCRIPTION
·With TO-220F package
·High DC current gain : hFE=2000 (Min)
·Low saturation voltage
·Complement to type 2SB1481
·DARLINGTON
APPLICATIONS
·With switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current
ICM Collector current-peak
IB Base current 0.3 A
PC Collector dissipation
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃
T
=25℃
C
±4
±6
2.0
25
A
A
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2241
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
V
ECF
Switching times
ton Turn-on time 0.2
ts Storage time 1.5
Collector-emitter breakdown voltage IC=10mA ;IB=0 100 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V
Base-emitter saturation voltage IC=3A ;IB=6mA 2.0 V
Collector cut-off current VCB=100V ;IE=0 20
Emitter cut-off current VEB=5V; IC=0 2.5 mA
DC current gain IC=1.5A ; VCE=2V 2000
DC current gain IC=3A ; VCE=2V 1000
Diode forward voltage IE=1A ; IB=0 2.0 V
IB1=-IB2=6mA
≈30V ,RL=10Ω
V
CC
Duty cycle≤1%
μA
μs
μs
tf Fall time
2
0.6
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2241
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2241
4
Page 5
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2241
5
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