Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2237
DESCRIPTION
·High DC Current Gain: h
= 2000(Min)@ I
FE
·Low Collector Saturation Voltage-
: V
= 2.0V(Max.) @IC= 5A
CE(sat)
·Complement to Type 2SB1478
APPLICATIONS
·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 2A
C
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 8 A
Collector Power Dissipation
C
@TC=25℃
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
60 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2237
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 100 V
Collector-Base Breakdown Voltage IC= 50μA; IE=0 100 V
Emitter-Base Breakdown Voltage IE= 2mA; IC=0 5 V
Collector-Emitter Saturation Voltage IC= 5A, IB= 20mA B 2.0 V
Base-Emitter Saturation Voltage IC= 5A, IB= 20mA B 2.5 V
Collector Cutoff current VCB= 100V, IE= 0 10 μA
Emitter Cutoff current VEB= 5V, IC= 0 2 mA
DC Current Gain IC= 2A; VCE= 3V 2000 20000
isc Website：www.iscsemi.cn
Loading...