Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2236
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Wide Area of Safe Operation
·Complement to Type 2SB1477
APPLICATIONS
·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
60 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2236
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 100 V
Collector-Base Beakdown Voltage IC= 50μA; IE=0 100 V
Emitter-Base Beakdown Voltage IE= 50μA; IC=0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 1A; VCE= 5V 60 320
hFE Classifications
D E F
60-120 100-200 160-320
isc Website：www.iscsemi.cn
2
Loading...