Page 1
Po wer Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1470
Features
■
●
Optimum for 120W HiFi output
●
High foward current transfer ratio h
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
FE
=25˚C)
C
Ratings
160
160
5
15
8
150
3.5
150
–55 to +150
CE(sat)
Unit
V
V
V
A
A
W
˚C
˚C
20.0±0.5
6.010.0
26.0±0.520.0±0.5
1.5
1.5
2.5
Solder Dip
10.9±0.5
123
Internal Connection
B
φ 3.3±0.2
4.02.0
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
Unit: mm
5.0±0.3
3.0
3.0
2.0
1.5
2.7±0.3
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3L Package
C
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
3500 to 10000 7000 to 20000
FE2
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 160V, IE = 0
VCE = 160V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
min
160
10000
3500
typ
20
1.2
E
max
100
100
100
Unit
µA
µA
µA
V
20000
3
3
V
V
MHz
2
6
µs
µs
µs
1
Page 2
Po wer Transistors 2SD2222
PC—Ta IC—V
200
)
180
W
(
160
C
140
120
100
80
60
40
20
Collector power dissipation P
0
0 16040 12080 14020 10060
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.1 1 10 1000.3 3 30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
(P
=3.5W)
C
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=1000
TC=–25˚C
25˚C
125˚C
Collector current IC (A
)
CE
10
9
8
)
A
(
7
C
6
5
4
3
Collector current I
2
1
0
0164128142106
)
Collector to emitter voltage VCE (V
hFE—I
5
10
FE
4
10
TC=125˚C
3
10
25˚C
2
10
C
–25˚C
T
C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
VCE=5V
=25˚C
0.5mA
0.4mA
0.3mA
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10
)
pF
(
ob
10
10
10
V
CE(sat)—IC
IC/IB=1000
3
TC=–25˚C
1
25˚C
125˚C
0.1 1 10 1000.3 3 30
Collector current IC (A
Cob—V
4
3
2
CB
IE=0
f=1MHz
T
=25˚C
C
)
Forward current transfer ratio h
Collector output capacitance C
10
0.1 1 100.03 300.3 3
Collector current IC (A
)
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
012108264
Collector current IC (A
2
ton, t
, tf — I
stg
Pulsed tw=1ms
Duty cycle=1%
=1000 (–IB1=IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
C
t
stg
t
on
t
f
)
Area of safe operation (ASO)
100
30
)
10
A
(
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
I
CP
I
C
Non repetitive pulse
=25˚C
T
C
t=1ms
10ms
DC
)
Page 3
Po wer Transistors 2SD2222
R
—t
th(t)
=10V × 0.3A (3W) and without heat sink
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
10
)
10
˚C/W
(
(t)
th
10
4
3
2
(1) P
(2) P
T
T
10
0
Thermal resistance R
–1
10
–4
10
–3
(2)
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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