Page 1
2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor
(Motor, Relay drive) (60±10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
zFeatures
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
∗
2 When mounted on a 40×40×0.7mm ceramic board.
∗
3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
2SD2212
2SD2143
2SD1866
Symbol
CBO
V
V
CEO
V
EBO
I
C
P
Tj
Tstg
C
Limits
60
±
10
60
±
10
6
2
∗1
3 A (Pulse)
0.5
∗2
2
1
10
∗3
1
150
−55 to +150
A (DC)
W (Tc=25
zPackaging specifications and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
2SD2212
MPT3
1k to 10k
DR
T100
1000
FE
2SD2143
CPT3
1k to 10k
TL
2500
2SD1866
ATV
1k to 10k
−−
TV2
2500
zEquivalent circuit
C
B
R
2
R
E :
B :
C :
Emitter
Base
Collector
1
R
R
E
1
3.5kΩ
2
300Ω
Unit
V
V
V
W
W
°C)
W
°C
°C
zExternal dimensions (Unit : mm)
2SD2212
ROHM : MPT3
EIAJ : SC-62
2SD2143
ROHM : CPT3
EIAJ : SC-63
2SD1866
ROHM : ATV
)
1
(
)
2
(
)
3
(
1.0
0.65Max.
2.3
2.3
0.8Min.
0.5
(1)
4.0
1.0
2.5
(1)
0.4
1.5
(2)
3.0
0.5
(3)
1.5
0.4
0.4
5.5
0.75
0.9
0.9
0.65
1.5
2.5
9.5
6.8
0.5
(2)
(3)
2.54
2.54
0.5
1.6
4.5
1.5
1.5
5.1
C0.5
0.5
4.4
0.9
1.0
14.5
Taping specifications
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
6.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2.5
0.451.05
(1) Emitter
(2) Collector
(3) Base
Rev.A 1/3
Page 2
2SD2212 / 2SD2143 / 2SD1866
Transistors
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
zElectrical characteristics curves
2.0
1.8
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Groundede emitter output
characteristics ( Ι )
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 0.01 0.1 0.2 0.5 1 2 5 10
Rev.A 2/3
Parameter
250µA
=200
B
I
Ta=25°C
A
µ
Ta=25°C
VCE=4V
VCE=2V
500µA
450µA
400µA
COLLECTOR CURRENT : IC (A)
300µA
Fig.4 DC current gain
vs. collector current ( Ι )
Symbol Min. Typ. Max. Unit Conditions
BV
BV
V
I
I
CE(sat)
h
Cob
52341
CBO
CEO
CBO
EBO
FE
f
T
50
−
70
50
−
−
−
−
−
−
1000
2.0
1.8
1.6
(A)
C
1.4
1.2
1.0
0.8
0.6
0.4
COLLECTOR CURRENT : I
0.2
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−
−
10000
80
−−
−
25
500µA
450µA
400µA
350µA
A
µ
300
µA
250
I
24681
70
1.0
1.5
=200
B
V
V
µA
3
mA
V
−
MHz
−
pF
µA
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
C
=50µA
I
I
C
=5mA
CB
=40V
V
EB
=5V
V
I
C/IB
=1A/1mA
CE
=2V, IC=1A
V
CE
=5V, IE= −0.1A, f=30MHz
V
V
CB
=10V, IE=0A, f=1MHz
Ta=25°C
0
5
VCE=2V
2
1
0.5
0.2
0.1
0.05
0.01
COLLECTOR CURRENT : Ic (A)
0.001
0.5 1 1.5 2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
FE
2000
1000
500
200
100
DC CURRENT GAIN : h
50
20
10
0.001 10
Fig.5 DC current gain
vs. collector current ( ΙΙ )
C
25°C
°
=100
Ta
°C
25
−
0.01 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)
VCE=2V
100
(V)
50
CE(sat)
20
10
0.5
COLLECTOR SATURATION
VOLTAGE : V
0.2
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=100˚C
IC/IB=1000
0.01 0.1 0.2
∗
25˚C
0.5
25˚C
−
Ta=25°C
500
11225510
Page 3
Transistors
100
(V)
50
CE(sat)
20
10
5
2
1
0.5
COLLECTOR SATURATION
VOLTAGE : V
0.2
Ta
=
−25
°C
25
°
C
0.01 0.10.2
COLLECTOR CURRENT : IC (A)
0.5
12 510
Fig.7 Collector-emitter saturation
voltage vs. collector current
10
5
Ic max (pulse)
2
DC
1
500m
200m
100m
50m
20m
10m
Ta=25°C
5m
COLLECTOR CURRENT : Ic (A)
Single
Nonrepetitive
2m
Pulse
1m
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (A. S. O)
2SD2143 (CPT)
Pw=1mS
Pw=100mS
Pw=10mS
IC/IB=1000
100
°
2SD2212 / 2SD2143 / 2SD1866
200
(pF)
ob
100
50
20
C
COLLECTOR OUTPUT
CAPACITANCE : C
0.05 0.1 0.250.51012 5102050
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
10
5
Ic max (pulse)
2
∗
DC
1
500m
200m
100m
50m
20m
Ta=25°C
10m
Single
Nonrepetitive
5m
Pulse
COLLECTOR CURRENT : Ic (A)
∗
When mounted on 1.7mm
thick PCB having collector
2m
plating area 1cm
1m
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2
or larger.
Pw=100mS
Fig.11 Safe operating area (A. S. O)
2SD1866 (ATV)
Pw=1mS
Pw=10mS
Ta=25°C
I
E
=0A
f=1MHz
10
5
Ic max (pulse)
2
1
500m
200m
100m
50m
20m
10m
Ta=25°C
5m
COLLECTOR CURRENT : Ic (A)
Single
Nonrepetitive
2m
Pulse
1m
0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Pw=100mS
Pw=1mS
Pw=10mS
DC
Fig.9 Safe operating area (A. S. O)
2SD2212 (MPT)
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 5
Loading...