Datasheet 2SD2196 Datasheet (Shindengen)

SHINDENGEN

Darlington Transistor

OUTLINE DIMENSIONS

2SD2196

(TP15L20)

15A NPN

RATINGS

●Absolute Maximum Ratings

Item Symbol

Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC

Collector Current Peak
Base Current DC

Base Current Peak
Total Transistor Dissipation
Dielectric Strength

Mounting Torque

Case : ITO-3P

Unit : mm

Conditions

Ratings Unit

Tstg -55～+150 ℃

Tj +150 ℃

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

T

Vdis

TOR

Tc = 25℃
Terminals to case AC 1 minute

(Recommended torque : 0.5N･m）

200 V
200 V

7V

15A
22 A

1 A
2A

65 W

2kV

0.8 N･m

●Electrical Characteristics (Tc=25℃)

Item Symbol

Collector Cutoff Current

Emitter Cutoff Current
DC Current Gain

Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance

Transition Frequency
Turn on Time

Storage Time

Fall Time

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

I

CBO

I

CEO

I

EBO

h

FE

VCE(sat)
VBE(sat)

θjc

f

T

ton Max 2

ts

tf

Conditions

VCB = 200V
VCE = 200V
VEB = 7V
V

= 3V, IC = 10A

CE

IC = 10A
IB = 30mA
Junction to case

V

= 10V, IC = 1.5A

CE

IC = 10A
IB1 = IB2 = 30mA
RL = 3Ω
V

= 4V

BB2

Ratings Unit

Max 0.1 mA
Max 0.1

Max 5 mA

Min 1,500

Max 30,000

Max 1.5 V
Max 2.0 V

Max 1.92 ℃/W

TYP 20 MHz

Max 12 μs

Max 5

C

- I

FE

h

= 3V

CE

V

22

[A]

C

2SD2196

50°C

100°C

10000

Tc = 150°C

FE

1000

Collector Current I

25°C

0°C

−25°C

−55°C

0.1 1 10

100

DC Current Gain h

BE

[V]

Base-Emitter Voltage V

3

22A

2.5

Saturation Voltage

22A

2

15A

1.5

1

0.5

0

2000

[mA]

B

2SD2196

= 0.5A 1.5A 5A 7.5A 10A 15A

C

I

3

2.5

CE

[V]

10A

7.5A

5A

1.5A

= 0.5A

C

I

2

1.5

1

0.5

Tc = 25°C

0

0.1 1 10 100 1000

Base Current I

Collector-Emitter Voltage V

[µs]

SW

10

2SD2196

Switching Time - I

t

s

t

f

C

1

Switching Time t

0.1
0 5 10 15 20

t

on

Collector Current IC [A]

IB1 = 0.333I
IB2 = 0.333I
V

= 4V

BB2

VCC = 50V

Tc = 25°C

C

C

[µs]

SW

10

2SD2196

Switching Time

t

s

t

f

1

Switching Time t

0.1
0 50 100 150 200

t

on

Collector Voltage VCC [V]

IC = 10A
IB1 = 0.033A
IB2 = 0.033A
V

= 4V

BB2

Tc = 25°C

R

= 3Ω

L

10

2SD2196

Switching Time - Tc

t

s

[µs]

SW

1

Switching Time t

t

t

f

on

IC = 10A
IB1 = 0.033A
IB2 = 0.033A
V

= 4V

BB2

R

= 5Ω

L

0.1
0 50 100 150

Case Temperature Tc [°C]

2

10

1

10

0

10

-1

10

Transient Thermal Impedance

2SD2196

10

1

0.1

0.01

-2

Time t [s]

10

-3

10

-4

10

-5

10

Transient Thermal Impedance θjc(t) [°C/W]

0.001

20

10

2SD2196

DC

PT limit

Forward Bias SOA

1ms10ms

150µs

[A]

1

C

Collector Current I

0.1

Tc = 25°C

Single Pulse

I

S/B

limit

0.01
1 10 100

Collector-Emitter Voltage VCE [V]

200

2SD2196 Collector Current Derating

100

80

60

40

Collector Current Derating [%]

20

PT limit

I

S/B

limit

VCE = fixed

0

0 50 100 150

Case Temperature Tc [°C]

24

20

16

[A]

C

12

2SD2196

Reverse Bias SOA

Collector Current I

8

4

IB1 = 0.002I
IB2 = 0.03A
V

= 5V

BB2

Tc = 25°C

0

0 50 100 150 200

C

Collector-Emitter Voltage VCE [V]