Page 1
Transistors
z
z
z
z
Low Frequency Transistor (20V, 3A)
2SD2150
Features
1) Low V
CE(sat).
V
CE(sat) =0.2V(T yp.)
IC / IB= 2A / 0.1A
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Unit : mm)
2SD2150
0.5±0.1
−0.1
+0.2
2.5
4.0±0.3
0.4±0.1
1.5±0.1
1.0±0.2
ROHM : MPT3
EIAJ : SC-62
+0.2
4.5
−0.1
1.6±0.1
(3)(2)(1)
0.5±0.1
0.4±0.1
1.5±0.1
3.0±0.2
Abbreviated symbol:
+0.2
1.5
−0.1
0.4
(1) Base
(2) Collector
(3) Emitter
CF
∗
+0.1
−0.05
2SD2150
z
Absolute maximum ratings (Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Single pulse Pw=10ms
∗
2 Mounted on a 40×40×0.7mm Ceramic substrate.
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Denotes h
∗
40 V
20
6
3
0.5
2
150
−55 to +150
FE
A (DC)
A (Pulse)5
W
W
°C
°C
V
V
1
∗
2
∗
Rev.A 1/3
Page 2
Transistors
z
z
z
Electrical characteristics (T a=25qC)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
∗
z
Packaging specifications and hFE
Package
Code T100
Basic ordering
FE
h
Type
2SD2150
unit (pieces)
RS
BV
BV
BV
I
CBO
I
EBO
V
CE(sat)
h
f
Cob
Taping
CBO
CEO
EBO
FE
T
1000
Min.
Typ. Max. Unit Conditions
40
20
6
−
−
−
120
−
−
−
−
−
−
−
0.2
−
290
25
−
−
−
0.1
0.1
0.5
560
−
−
MHz
C
=50μA
VI
C
=1mA
V
I
E
=50μA
I
V
CB
μ
A
V
EB
μ
A
V
V
I
C/IB
V
−
CE
V
CE
CE
V
pF
2SD2150
=30V
=5V
=2A/0.1A
=2V, IC=0.1A
=2V, IE= −0.5A, f=100MHz
=10V, IE=0A, f=1MHz
∗
hFE values are classified as follows :
Item
FE
h
z
Electrical characteristic curves
10
5
2
(A)
C
1
0.5
0.2
0.1
0.05
0.02
0.01
5m
COLLECTOR CURRENT : I
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE
Fig.1 Grounded emitter propagation
characteristics
R
180 to 390S270 to 560
Ta=100°C
25°C
−40°C
VCE
=2V
(V)
2
20mA
18mA
16mA
14mA
(A)
1.6
C
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.2 0.4 0.6 0.8 1.0
COLLECTOR TO EMITTER VOLTAGE : V
12mA
10mA
Fig.2 Grounded emitter output
characteristics ( )
Ta=25°C
8mA
6mA
4mA
2mA
B
=
I
5
50mA
45mA
40mA
(A)
4
C
3
2
1
COLLECTOR CURRENT : I
0A
CE
0
012345
COLLECTOR TO EMITTER VOLTAGE : V
(V)
Fig.3 Grounded emitter output
35mA
30mA
characteristics ( )
Ta=25°C
25mA
20mA
15mA
10mA
5mA
I
B
=0A
CE
(V)
Rev.A 2/3
Page 3
Transistors
2SD2150
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
5
1m
Ta=100°C
25°C
−40°
C
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : I
V
C
(A)
Fig.4 DC current gain vs.
collector current
2
(V)
CE(sat)
1
0.5
0.2
0.1
50m
20m
10m
5m
2m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−40°
C
2m 5m10m20m50m 0.2 0.5 1 2 5 101m
COLLECTOR CURRENT : I
0.1
IC/I
C
(A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( )
2
CE
=
2V
(V)
CE(sat)
1
0.5
0.2
0.1
50m
20m
10m
5m
2m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−40°
C
2m 5m10m20m50m0.10.2 0.5 1 2 5 101m
COLLECTOR CURRENT : I
IC/I
C
(A)
B
=
10
Fig.5 Collector-emitter
saturation voltage vs.
collector current ( )
B
=
1000
20
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
−20 −50
−5−2−1 −10
EMITTER CURRENT : I
−100−200−500−1 000
E
(mA)
Ta=25
V
CE
=2V
°C
Fig.8 Gain bandwidth product vs.
emitter current
1
(V)
lC/l
B
=
20
0.5
CE(sat)
0.2
0.1
0.05
0.02
0.01
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
0.011m 2m 5m 0.020.05
Ta=100°C
25°C
−40°
C
1
0.50.20.1
C
(A)
Fig.6 Collector-emitter
saturation voltage vs.
collector curren ( )
1000
(pF)
ob
500
200
100
50
20
10
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : C
0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Cob
Cob
Ta=25°C
f=1MHz
E=0A
I
IC=0A
Fig.9 Collector output capacitance vs.
collector-base voltage
1025
Emitter input capacitance vs.
emitter-base voltage
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commer c i a l l y
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this documentare designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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