Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2148
DESCRIPTION ·
·With TO-3PML package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·High speed switching power supply
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
=25℃)
a
PC Collector power dissipation TC=25℃ 50 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2148
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=5mA , IB=0 700 V
Emitter-base breakdown voltage IE=1mA , IC=0 5 V
Collector-emitter saturation voltage IC=7A ;IB=1.4A 5.0 V
Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V
Collector cut-off current VCB=800V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=1A ; VCE=5V 8
DC current gain IC=7A ; VCE=5V 4
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2148
PACKAGE OUTLINE
Fig.2 outline dimensions(unindicated tolerance:±0.10 mm)
3
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