Page 1
1
Base
2
Emitter
3
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter
Millimeter
R1M
Elektronische Bauelemente
FEATURE
Darlington connection for a high hFE.
High input impedance.
MARKING
PACKAGE INFORMATION
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SD2142
0.3A , 40V
SOT-23
Package MPQ LeaderSize
SOT-23 3K 7’ inch
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 300 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction to Ambient R
Junction, Storage Temperature TJ, T
(TA = 25°C unless otherwise specified)
40 V
CBO
32 V
CEO
12 V
EBO
625 °C / W
θJA
150, -55~150 °C
STG
REF.
Collector
Min. Max.
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 5000
Collector to Emitter Saturation Voltage
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Transition Frequency fT - 200 - MHz VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance Cob - 2.5 - pF VCB=10V, IE=0, f=1MHz
(TA = 25°C unless otherwise specified)
Test Conditions
40 - - V IC=100µA, IE=0
(BR)CBO
32 - - V IC=10mA, IB=0
(BR)CEO
12 - - V IE=100µA, IC=0
(BR)EBO
- - 0.1 µA VCB=30V, IE=0
CBO
- - 0.1 µA VEB=12V, IC=0
EBO
- - VCE=3V, IC=100mA
V
- - 1.4 V IC=200mA, IB=0.2mA
CE(sat)
Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SD2142
NPN Plastic-Encapsulate Transistor
0.3A , 40V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 2 of 2
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