Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2129
DESCRIPTION
·With TO-220F package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
IB Base current 0.5 A
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
PC Collector dissipation
TC=25℃
Tj Junction temperature 150
T
Storage temperature -55~150
stg
2
W
20
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2129
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton Turn-on time 1.0
Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V
Collector-emitter saturation voltage IC=1.5A ;IB=3mA 1.5 V
Collector-emitter saturation voltage IC=3A ;IB=12mA 2.0 V
Base-emitter saturation voltage IC=1.5A ;IB=3mA 2.0 V
Collector cut-off current VCB=100V; IE=0 100
Emitter cut-off current VEB=6V; IC=0 2.5 mA
DC current gain IC=1.5A ; VCE=3V 2000 15000
DC current gain IC=3A ; VCE=3V 1000
μA
μs
ts Storage time 5.0
tf Fall time
2
I
=-IB2=3mA
B1
≈30V ,RL=20Ω
V
CC
2.0
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2129
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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