Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2125
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low saturation voltage
APPLICATIONS
·Horizontal output applications for color TV
·Medium resolution display
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 10 A
IB Base current 3 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation TC=25℃ 50 W
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2125
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF
VF
tf
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=5A ;IB=1A 3.0 5.0 V
Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
DC current gain IC=1A ; VCE=5V 8 20
DC current gain IC=5A ; VCE=5V 5
Diode forward voltage I
Fall time I
=6A 2.0 V
F
=5A ;IBL=1A;VCC=100V 0.5 μs
CP
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2125
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Loading...