Datasheet 2SD2124-S, 2SD2124-L Datasheet (HIT)

2SD2124(L)/(S)

Silicon NPN Epitaxial

Application

Low frequency power amplifier

Outline

4

1

2

3

4

3

2

1

1. Base

2. Collector

3. Emitter

4. Collector

DPAK

S Type

L Type

6 kΩ

(Typ)

0.5 kΩ
(Typ)

I

D

1

2, 4

3

2SD2124(L)/(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

120 V

Collector to emitter voltage V

CEO

120 V

Emitter to base voltage V

EBO

7V

Collector current I

C

1.5 A

Collector peak current I

C(peak)

3.0 A

Collector power dissipation PC*

1

18 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*

1

1.5 A

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

V

(BR)CBO

120 — — V IC = 0.1 mA, IE = 0

Collector to emitter breakdown
voltage

V

(BR)CEO

120 — — V IC = 10 mA, RBE = ∞

Emitter to base breakdown
voltage

V

(BR)EBO

7——VI

E

= 50 mA, IC = 0

Collector cutoff current I

CBO

——10µAV

CB

= 100 V, IE = 0

I

CEO

— — 10 VCE = 100 V, RBE = ∞

DC current transfer ratio h

FE

2000 — 30000 VCE = 3 V, IC = 1 A*

1

Collector to emitter saturation V

CE(sat)

— — 1.5 V IC = 1 A, IB = 1 mA*

1

voltage V

CE(sat)

— — 2.0 IC = 1.5 A, IB = 1.5 mA*

1

Base to emitter saturation V

BE(sat)

— — 2.0 V IC = 1 A, IB = 1 mA*

1

voltage V

BE(sat)

— — 2.5 IC = 1.5 A, IB = 1.5 mA*

1

C to E diode forward voltage V

D

— — 3.0 V ID = 1.5 A*

1

Turn on time t

on

— 0.5 — µsI

C

= 1 A, IB1 = –IB2 = 1 mA

Turn off time t

off

— 2.0 — µs

Note: 1. Pulse test.

2SD2124(L)/(S)

3

Maximum Collector Dissipation Curve

30

20

10

0 50 100 150

Case temperature T

C

(°C)

Collector power dissipation P

C

(W)

10

1.0

3.0

Collector current I

C

(A)

0.3

0.03

0.01

0.1

3 10 30 300100

Collector to emitter voltage V

CE

(V)

Ta = 25°C
1 shot pulse

I

C(max)

i

C(peak)

I

C(max)

PW = 10 ms

100 µs

1 ms

Area of Safe Operation

DC Operation

(T

C

= 25°C)

TC = 25°C

I

B

= 0

2.0

1.6

1.2

0.8

0.4

0

Collector current I

C

(A)

2

Collector to emitter voltage V

CE

(V)

64108

Typical Output Characteristics

120 µA

140

160

180

200

30,000

10,000

1,000

3,000

300

0.03 0.1

DC current transfer ratio h

FE

0.3

Collector current I

C

(A)

1.0 3.0

VCE = 3 V
Ta = 25°C

DC Current Transfer Ratio

vs. Collector Current

2SD2124(L)/(S)

4

Saturation Voltage

vs. Collector Current

10

3

1.0

Collector to emitter saturation voltage V

CE(sat)

(V)

Base to emitter saturation voltage V

BE(sat)

(V)

0.3

0.1

0.03 0.1 1.0
Collector current I

C

(A)

0.3 3.0

V

BE(sat)

V

CE(sat)

IC = 500 I

B

Ta = 25°C

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

DPAK (L)-(1)
—
Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

Cautions

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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