Page 1
2SD2114K / 2SD2144S
Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD21 14K / 2SD2144S
zFeatures
1) High DC current gain.
h
FE = 1200 (Typ.)
2) High emitter-base voltage.
V
EBO =12V (Min.)
3) Low V
(I
CE (sat).
V
CE (sat) = 0.18V (Ty p.)
C / IB = 500mA / 20mA)
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2114K
2SD2144S
Junction temperature
Storage temperature
Single pulse Pw=100ms
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
25 V
20
12
0.5
0.2
0.3
150
−55 to +150
zExternal dimensions (Unit : mm)
2SD2114K
ROHM : SMT3
EIAJ : SC-59
2SD2144S
ROHM : SPT
EIAJ : SC-72
Denotes h
∗
2.9±0.2
1.9±0.2
0.95
(1)
FE
All terminals have same dimensions
0.2(15Min.)
±
3
5
V
V
A(DC)
A(Pulse)1
∗
W
°C
°C
0.95
(2)
−0.1
+0.2
2.8±0.2
1.6
(3)
+0.1
0.4
−0.05
Abbreviated symbol: BB
4±0.2 2±0.2
3Min.
+
0.15
0.45
−
0.05
+
0.4
2.5
−
0.1
(1)
(2) (3)
0.15
+0.2
1.1
−0.1
0.8±0.1
0∼0.1
+0.1
−0.06
0.3∼0.6
(1) Emitter
∗
+
0.15
0.45
0.5
−
0.05
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
Rev.B 1/4
Page 2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
∗
zPackaging specifications and h
Package
Code T146 TP
Type
2SD2114K
2SD2144S
h
FE
VW
VW
Basic ordering
unit (pieces)
FE
h
FE values are classified as follows :
Min.
BV
CBO
25
f
CEO
EBO
FE
T
20
12
−
−
−
820
−
∗
−
−
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
Cob
Ron
Taping
3000 5000
−
2SD2114K / 2SD2144S
Typ. Max. Unit Conditions
V
V
V
µA
µA
V
MHz
pF
Ω
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=20V
V
EB
=10V
I
C/IB
=500mA/20mA
VCE=3V, IC=10mA−
CE
=10V, IE= −50mA, f=100MHz
V
V
CB
=10V, IE=0A, f=1MHz
B
=1mA, Vi=100mV(rms), f=1kHz
−
−
−
−
−
−
0.5
−
0.5
−
−
350
8.0
0.8
0.4
2700
−
−
− I
0.18
−
Item
FE
h
V
820 to 1800W1200 to 2700
zElectrical characteristic curves
2.0
Ta=25°C
2.0µA
(mA)
1.6
C
1.8µA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : V
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
I
B
=0
Fig.1 Grounded emitter output
characteristics ( )
1000
(mA)
800
C
600
400
200
COLLECTOR CURRENT : I
CE
COLLECTOR TO EMITTER VOLTAGE : V
(V)
1.8mA 2.0mA
1.6mA
1.4mA
0
0246810
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
=0mA
I
1.2mA
Ta=25°C
Measured using
pulse current.
CE
(V)
Fig.2 Grounded emitter output
characteristics ( )
1000
500
(mA)
Ta=100°C
200
C
100
50
20
10
COLLECTOR CURRENT : I
25°C
−25°C
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : V
V
Measured using
pulse current.
Fig.3 Grounded emitter propagation
characteristics
CE
=
3V
BE
(V)
Rev.B 2/4
Page 3
Transistors
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 5001000
1V
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
V
CE
=5V
3V
C
(mA)
10000
5000
FE
2000
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
1 2 5 10 20 50 100 200 500 1000
Ta=100°C
COLLECTOR CURRENT : I
25°C
−25°C
V
CE
Measured using
pulse current.
2SD2114K / 2SD2144S
=
3V
C
(mA)
2000
(mV)
1000
500
200
100
50
IC/IB=100
50
20
25
10
10
5
2
2 5 10 20 50 100 200 5001000
1
COLLECTOR SATURATION VOLTAGE : VCE(sat)
COLLECTOR CURRENT : I
Ta=25°C
Measured using
pulse current.
C
(mA)
Fig.4 DC current gain vs. collector
current ( )
Fig.5 DC current gain vs.
collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
2000
(mV)
1000
CE(sat)
500
200
100
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
50
20
10
5
2
1
25°C
−25°C
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
I
C
/
I
B
=
25
Measured using
pulse current.
C (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
IC/IB=10
25
50
100
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : I
Fig.8 Base-emitter saturation
voltage vs. collector current ( )
Ta=25°C
Pulsed
C
(mA)
10000
(mV)
5000
BE(sat)
BASE SATURATION VOLTAGE : V
Ta=−25°C
2000
1000
500
200
100
50
20
10
25°C
100°C
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
C/lB
=10
l
Measured using
pulse current.
C
(mA)
10000
5000
(MHz)
T
2000
1000
500
200
100
50
20
TRANSITION FREQUENCY : f
10
−1 −2 −5 −10 −20 −50
EMITTER CURRENT : I
Ta=25°C
V
CE
=
Measured using
pulse current.
−100 −200 −500 −1000
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
10V
1000
(pF)
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Fig.11 Collector output capacitance
vs. collector-base voltage
Ta=25°C
=
1MHz
f
I
E
=
0A
CB
100
(Ω)
ON RESISTANCE : Ron
(V)
Ta=25°C
50
20
10
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
BASE CURRENT : I
f=1kHz
Vi=100mV(
RL=1kΩ
B
(mA)
Fig.12 Output-on resistance vs.
base current
rms)
Rev.B 3/4
Page 4
Transistors
zRon measurement circuit
RL=1kΩ
2SD2114K / 2SD2144S
Input
v
i
1kHz
100mV(rms)
v
vi−v
0
0
Ron= ×R
I
B
L
V
Output
v
0
Rev.B 4/4
Page 5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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