Datasheet 2SD2114 Datasheet (Secos) [ru]

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Elektronische Bauelemente

FEATURE

 High DC Current Gain.
 High Emitter-Base Voltage. V

CLASSIFICATION OF hFE

Product-Rank 2SD2114-V

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

=12V (Min.)

EBO

2SD2114

0.5A , 25V

NPN Plastic-Encapsulate Transistor

SOT-23

A

L

3

Top View

1

K E

C B

2

1

3

2

Range 820~1800

Marking BBV

F

D

G

H J

PACKAGE INFORMATION

Package MPQ Leader Size

SOT-23 3K 7 inch

REF.

Millimeter Millimete

Min. Max.

A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50

REF.

Collector

Min. Max.



(T

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit

Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 500 mA
Collector Power Dissipation PC 250 mW
Junction, Storage Temperature TJ, T

= 25°C unless otherwise specified)

A

25 V

CBO

20 V

CEO

12 V

EBO

150, -55~150 °C

STG



Base



Emitter

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

A

Parameter Symbol Min. Typ. Max. Unit Test Conditions

Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 820 - 1800 VCE=3V, IC=10mA
Collector to Emitter Saturation Voltage V
Transition Frequency fT - 350 - MHz VCE=10V, IC=50mA, f=100MHz
Collector Output Capacitance Cob - 8 - pF VCB=10V, IE=0, f=1MHz
On Resistance R

25 - - V IC=10μA, IE=0

(BR)CBO

20 - - V IC=1mA, IB=0

(BR)CEO

12 - - V IE=10μA, IC=0

(BR)EBO

- - 0.5 μA VCB=20V, IE=0

CBO

- - 0.5 μA VEB=10V, IC=0

EBO

- - 0.4 V IC=500mA, IB=20mA

CE(sat)

- 0.8 - Ω Vin=0.1V(rms), IB=1mA, f=1KHz

(on)

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Nov-2012 Rev. C

Page 1 of 3

Elektronische Bauelemente

CHARACTERISTIC CURVES

2SD2114

NPN Plastic-Encapsulate Transistor

0.5A , 25V

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Nov-2012 Rev. C

Page 2 of 3

Elektronische Bauelemente

CHARACTERISTIC CURVES

2SD2114

NPN Plastic-Encapsulate Transistor

0.5A , 25V

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

27-Nov-2012 Rev. C

Page 3 of 3