Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2111
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Collector-Emitter Saturation Voltage : V
CE(sat)
·High DC Current Gain
: h
= 1000(Min) @ IC= 1.5A, VCE= 3V
FE
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
= 120V(Min)
= 1.5V(Max) @IC= 1.5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Peak 6 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
25
W
2
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2111
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
V
CE(
sat
V
BE(
sat
V
BE(
sat
I
CBO
I
CEO
h
FE
Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 120 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA B 3.0 V
)-2
Base-Emitter Saturation Voltage IC= 1.5A; IB= 3mA 2.0 V
)-1
Base-Emitter Saturation Voltage IC= 3A; IB= 30mA B 3.5 V
)-2
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA
DC Current Gain IC= 1.5A; VCE= 3V 1000 20000
V
ECF
C-E Diode Forward Voltage IF= 3A 3.0 V
isc Website：www.iscsemi.cn
2
Loading...