Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2110
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Collector-Emitter Saturation Voltage : V
·High DC Current Gain
: h
FE
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
(BR)CEO
= 1.5V(Max) @IC= 2A
CE(sat)
= 1000(Min) @ IC= 2A, VCE= 3V
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
25
W
2
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD2110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
V
CE(
sat
V
BE(
sat
V
BE(
sat
I
CBO
I
CEO
h
FE
Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 80 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.0 V
)-2
Base-Emitter Saturation Voltage IC= 2A; IB= 4mA B 2.0 V
)-1
Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 3.5 V
)-2
Collector Cutoff Current VCB= 65V; IE= 0 10 μA
Collector Cutoff Current VCE= 65V; RBE= ∞ 10 μA
DC Current Gain IC= 2A; VCE= 3V 1000 20000
V
ECF
C-E Diode Forward Voltage IF= 4A 3.0 V
isc Website：www.iscsemi.cn
2
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