Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD211
DESCRIPTION
·With TO-3 package
·Large current capability
·Wide area of safe operation
APPLICATIONS
·For power amplifier and switching
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
100 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD211
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=5A ; IB=0.5A 1.5 V
Base-emitter saturation voltage IC=5A ; IB=0.5A 2.5 V
Collector cut-off current VCB=60V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gai n IC=5A ; VCE=4V 30
fT Transition frequency IC=1A ; VCE=12V 8 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD211
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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