Page 1
Application
Low frequency power amplifier
Outline
TO-220FM
2SD2107
Silicon NPN Triple Diffused
1. Base
2. Collector
1
2
3
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
1
P
*
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
70 V
60 V
5V
4A
8A
2W
25
Page 2
2SD2107
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. Pulse test.
2. The 2SD2107 is grouped by h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
BE
V
CE(sat)
V
BE(sat)
70 — — V IC = 10 µA, IE = 0
60 — — V IC = 50 mA, RBE = ∞
5——VI
= 10 µA, IC = 0
E
——10µAVCB = 60 V, IE = 0
— — 10 VCE = 50 V, RBE = ∞
2
*
60 — 200 VCE = 4 V, IC = 1 A*
35 — VCE = 4 V, IC = 0.1 A*
— — 1.0 V VCE = 4 V, IC = 1 A*
— — 1.0 V IC = 2 A, IB = 0.2 A*
— — 1.2 V IC = 2 A, IB = 0.2 A*
as follows.
FE1
1
1
1
1
1
BC
60 to 120 100 to 200
Maximum Collector Dissipation Curve
30
(W)
C
20
10
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
Typical Output Characteristics
5
4
(A)
C
TC = 25°C
60
3
2
1
Collector current I
0
Collector to emitter voltage V
4
26810
30
50
40
P
C
20
10 mA
= 25 W
(V)
CE
2
Page 3
1,000
FE
500
200
100
DC Current Transfer Ratio vs. Collector Current
T
= 75°C
C
25°C
–25°C
2SD2107
50
20
DC current transfer ratio h
10
0.1 1.0 100.5 50.2 2
0.01 0.02
0.05
Collector current I
C
(A)
Saturation Voltage vs. Collector Current
10
(V)
(V)
CE(sat)
BE(sat)
3
V
BE(sat)
1.0
CE(sat)
V
0.3
TC = 25°C
I
C/IB
0.1
Base to emitter saturation voltage V
Collector to emitter saturation voltage V
0.01 0.02 0.1 1.0 10
0.05 0.5 50.2 2
Collector current I
C
(A)
VCE = 4 V
= 10
3
Page 4
2SD2107
Transient Thermal Resistance
10
(°C/W)
j-c
Thermal resistance θ
3
1.0
0.3
0.1
1m 10m 100m 1.0 10 100 1000
TC = 25°C
Time t (s)
4
Page 5
10.0 ± 0.3
7.0 ± 0.3
φ
3.2 ± 0.2
0.6
2.8 ± 0.2
2.5 ± 0.2
Unit: mm
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
0.7 ± 0.1
2.54 ± 0.52.54 ± 0.5
12.0 ± 0.3
5.0 ± 0.3
4.45 ± 0.3
2.5
Hitachi Code
JEDEC
EIAJ
Weight
17.0 ± 0.3
14.0 ± 1.0
0.5 ± 0.1
(reference value)
TO-220FM
—
Conforms
1.8 g
Page 6
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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