Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2095
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 2.5 A
PC Collector power dissipation 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2095
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 105 pF
VF
tf
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=3.5A; IB=0.8A 3.0 5.0 V
Base-emitter saturation voltage IC=3.5A; IB=0.8A 1.5 V
Collector cut-off current VCB=500V; IE=0 10
DC current gain IC=1A ; VCE=5V 8
Diode forward voltage I
Fall time
=5A 1.6 2.0 V
F
ICP=3.5A ;I
B1
(end)
=0.8A
0.5 1.0
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2095
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Loading...