Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2089
DESCRIPTION ·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Small screen color TV horizontal
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
IB Base current 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
Ta=25℃
Tc=25℃
3.5
W
40
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2089
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF
VF
tf
Emitter-base breakdown voltage IE=200mA , IC=0 5 V
Collector-emitter saturation voltage IC=2.2A; IB=0.7A 0.3 1.0 V
Base-emitter saturation voltage IC=2.2A; IB=0.7A 0.85 1.0 V
Collector cut-off current VCB=500V; IE=0 10
DC current gain IC=0.5A ; VCE=5V 9 18
Diode forward voltage I
Fall time
=2.2A 1.2 1.5 V
F
ICP=2.2A ;I
B1
(end)
=0.7A
0.2 0.5
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2089
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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