Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2066
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Complement to type 2SB1373
APPLICATIONS
·For high power amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 12 A
PC Collector power dissipation
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃
T
=25℃
C
2.5
W
120
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2066
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=25mA; IB=0 160 V
(BR)CEO
V
Collector-emitter saturation voltage IC=8A; IB=0.8A 2.0 V
CEsat
V
Base-emitter on voltage IC=8A;VCE=5V 1.8 V
BE
I
Collector cut-off current VCB=160V; IE=0 50 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 50 μA
EBO
h
DC current gain IC=20mA ; VCE=5V 20
FE-1
h
DC current gain IC=1A ; VCE=5V 60 200
FE-2
h
DC current gain IC=8A ; VCE=5V 15
FE-3
fT Transition frequency IC=0.5A ; VCE=5V 20 MHz
COB Collector output capacitance f=1MHz;VCB=10V 210 pF
h
Classifications
FE-2
Q P
60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2066
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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