Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2065
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SB1372
APPLICATIONS
·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 140V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 140 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Current-Pulse 12 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
80
W
3
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2065
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
CE
h
h
h
C
BE
I
CBO
I
EBO
FE-1
FE-2
FE-3
f
FE-2
(sat)
(on)
T
OB
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V
Collector Cutoff Current VCB= 140V; IE= 0 50 μA
Emitter Cutoff Current VEB= 3V; IC= 0 50 μA
DC Current Gain IC= 20mA; VCE= 5V 20
DC Current Gain IC= 1A; VCE= 5V 60 200
DC Current Gain IC= 5A; VCE= 5V 20
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5 V; f= 1MHz 20 MHz
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 110 pF
Classifications
Q S P
60-120 80-160 100-200
isc Website：www.iscsemi.cn
2
Loading...