Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2060
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1368
·Low collector saturation voltage:
V
=1.7V(Max) at IC=3A,IB=0.3A
CE(SAT)
·Collector power dissipation:
=25W(TC=25℃)
P
C
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
IB Base current 0.4 A
PC Collector dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
Ta=25℃ 2.0
W
TC=25℃ 25
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2060
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=5V 8.0 MHz
COB Collector output capacitance f=1MHz;VCB=10V 90 pF
Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V
Emitter-base breakdown voltage IE=10mA ;IC=0 5 V
Collector-emitter saturation voltage IC=3A ;IB=0.3A 0.45 1.5 V
Base-emitter on voltage IC=3A;VCE=5V 1.0 1.5 V
Collector cut-off current VCB=80V; IE=0 30 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=0.5A ; VCE=5V 40 240
DC current gain IC=3A ; VCE=5V 15 50
h
Classifications
FE-1
R O Y
40-80 70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2060
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2060
4
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