Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2059
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1367
·Low collector saturation voltage:
V
=2.0V(Max) at IC=4A,IB=0.4A
CE(SAT)
·Collector power dissipation:
=30W(TC=25℃)
P
C
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
IB Base current 0.5 A
PC Collector dissipation TC=25℃ 30 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=5V 12 MHz
COB Collector output capacitance f=1MHz;VCB=10V 100 pF
h
FE-1
Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V
Collector-emitter saturation voltage IC=4A ;IB=0.4A 2.0 V
Base-emitter on voltage IC=1A;VCE=5V 1.5 V
Collector cut-off current VCB=100V;IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=5V 40 240
DC current gain IC=4A ; VCE=5V 20
Classifications
R O Y
40-80 70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2059
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2059
4
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