Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage:
V
·Collector power dissipation:
P
APPLICATIONS
·With general purpose applications
PINNING
=1.0V(Max) at IC=2A,IB=0.2A
CE(SAT)
=25W(TC=25℃)
C
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 0.5 A
PC Collector dissipation
Collector-base voltage Open emitter 60 V
Collector-emitt er voltage Open base 60 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 1.5
W
TC=25℃ 25
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
hFE DC current gain IC=0.5A ; VCE=5V 60
fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz
COB Collector output capacitance f=1MHz;VCB=10V 35 pF
Switching times
ton Turn-on time 0.65 μs
ts Storage time 1.30 μs
tf Fall time
Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V
Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V
Base-emitter on voltage IC=0.5A;VCE=5V 3.0 V
Collector cut-off current VCB=60V;IE=0 10 μA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
I
=2.0A; IB1=-IB2=0.2A
C
=30V ,RL=15Ω
V
CC
0.65 μs
hFE Classifications
O Y G
60-120 100-200 150-300
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
4
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