Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2057
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
·Wide area of safe operation
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 20 A
IB Base current 4 A
PC Collector power dissipation
Collector-base voltage Open emitter 1500 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 3
W
=25℃ 100
T
C
Tj Max.operating junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2057
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V;f=0.5MHz 2 MHz
VF Diode forward voltage IC=-6A ;IB=0 -2.3 V
ts Storage time 12 μs
tf Fall time
Emitter-base breakdown voltage IE=500mA ;IC=0 7 V
Collector-emitter saturation voltage IC=5A; IB=1.2A 8.0 V
Base-emitter saturation voltage IC=5A; IB=1.2A 1.5 V
VCB=1000V; IE=0 30 μA
Collector cut-off current
=1500V; IE=0 0.3 mA
V
CB
DC current gain IC=1A ; VCE=5V 8
DC current gain IC=5A ; VCE=10V 4.5 15
I
=5A;IB1=-IB2=1.2A;L
C
Leak
=5μH
0.8 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2057
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
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