Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2033
DESCRIPTION
·Good Linearity of h
· Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Complement to Type 2SB1353
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(T
FE
= 120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5.0 V
Collector Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
a
C
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
J
Storage Temperature Range -55~150 ℃
1.8
W
20
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2033
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
I
I
h
h
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 2.0 V
)
sat
CBO
EBO
FE
f
T
FE
Collector Cutoff Current VCB= 120V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC=0 10
DC Current Cain IC= 0.1A ; VCE= 5V 60 320
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V 50 MHz
Classifications
μA
μA
D E F
60-120 100-200 160-320
isc Website：www.iscsemi.cn
2
Loading...