Page 1
2SD2030, 2SD2031
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD2030, 2SD2031
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD2030 2SD2031 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base
2SD2030 V
(BR)CBO
breakdown voltage
2SD2031 200
Collector to emitter
2SD2030 V
(BR)CEO
breakdown voltage
2SD2031 200
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff
2SD2030 I
CBO
current
2SD2031 V
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
h
V
FE1
FE2
BE
CE(sat)
voltage
Gain bandwidth product f
Collector output capacitance C
T
ob
Note: 1. The 2SD2030 and 2SD2031 are grouped by h
Grade B C
h
FE1
60 to 120 100 to 200
160 — — V IC = 10 µA, IE = 0
160 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
*
60 — 200 VCE = 5 V, IC = 10 mA
30 — — VCE = 5 V, IC = 1 mA
— — 1.5 V VCE = 5 V, IC = 10 mA
— — 0.5 V IC = 30 mA, IB = 3 mA
— 140 — MHz VCE = 5 V, IC = 10 mA
— 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz
160 200 V
160 200 V
55V
100 100 mA
400 400 mW
= 10 µA, IC = 0
E
= 140 V, IE = 0
CB
= 160 V, IE = 0
CB
as follows.
FE1
2
Page 3
2SD2030, 2SD2031
Maximum Collector Dissipation Curve
600
400
200
Collector Power Dissipation Pc (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
100
VCE = 5 V
50
(mA)
C
20
10
Collector Current I
5
2
Pulse Test
25
Ta = 75°C
–25
Typical Output Characteristics
20
16
(mA)
C
12
120
110
100
90
80
70
8
60
50
40
4
Collector Current I
30
20
10 µA
IB = 0
0 246810
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
500
FE
200
VCE = 5 V
Pulse Test
Ta = 75°C
100
–25
50
25
20
10
DC Current Transfer Ratio h
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
5
1 2 5 10 20 50 100
Collector Current I
(mA)
C
3
Page 4
2SD2030, 2SD2031
Saturation Voltage vs. Collector Current
5
2
1.0
(V)
(V)
0.5
(sat)
(sat)
BE
CE
V
V
0.2
0.1
Base to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
0.05
lC = 10 l
B
Pulse Test
VBE
(sat)
VCE
(sat)
1 2 5 10 20 50 100
Collector Current I
Ta = –25°C
75
25
75
25
Ta = –25°C
(mA)
C
50
(pF)
ob
20
10
500
200
(MHz)
T
100
50
20
10
Gain Bandwidth Product f
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
= 0
I
E
Gain Bandwidth Product vs.
Collector Current
VCE = 5 V
Pulse Test
5
0.5 1.0 2 5 10 20 50
Collector Current IC (mA)
5
2
1.0
Collector Output Capacitance C
0.5
1 2 5 10 20 50 100
Collector to Base Voltage VCB (V)
4
Page 5
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 6
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